Spin Transfer torque Devices as an emerging non volatile memory technology
Sayeef Salahuddin, Professor
Electrical Engineering and Computer Science
Applications for Spring 2025 are closed for this project.
A remarkable development in the recent years has been the demonstration that a nanoscale magnet can be switched by a spin-polarized current, without having to apply any external magnetic field. It is a fascinating phenomenon from two different perspectives. Firstly, this effect is purely mediated by quantum mechanics, but unlike most other quantum mechanical phenomena, the effect exists well beyond room temperature. Thus from scientific point of view this gives control over magnetization in a way that was not possible before. But at the same time, by virtue of not needing a magnetic field, it provides an immense potential for a high density, ultra fast and scalable non-volatile memory. Our group has been at the forefront of this development by providing a simulation platform that tries to capture and explain the essential physics and device potential of these memory devices. We shall be looking at some other exciting possibilities that one can imagine to do with this unique and fascinating spintronic device.
Qualifications: Some experience with MATLAB or C is preferred
Related website: http://eecs.berkeley.edu/~sayeef/
Engineering, Design & Technologies Mathematical and Physical Sciences