Imaging gate-tunable air sensitive materials using Scanning Tunneling Microscopy (STM)
Michael F. Crommie, Professor
Physics
Closed. This professor is continuing with Fall 2024 apprentices on this project; no new apprentices needed for Spring 2025.
Air sensitive transition metal dichalcogenides (TMDs) is a class of material hosting interesting quantum phenomena, such as quantum spin liquid, Mott insulator, quantum spin hall insulator etc. To reach different quantum phases of materials, one important tuning parameter is the carrier concentrations inside the material which can be controlled by the bottom gate geometry. In this project, we aim to fabricate atomically clean gate-tunable air sensitive TMD device inside the glovebox and image the electronic structure of the material using STM.
Role: The student will learn and independently perform the sample fabrication including exfoliation of two-dimensional (2D) materials, polymer assisted stacking of 2D materials, high temperature annealing and contact evaporation. After the sample is made, the student will use various characterization techniques such as atomic force microscopy (AFM) to check the sample quality before mounting the sample. If the whole process goes smoothly, the student will have the opportunity to measure the fabricated device using STM.
Qualifications: The student is expected to have basic solid state physics knowledge and willing to take on a challenge. Applicants with physics or engineering backgrounds are all welcome.
Day-to-day supervisor for this project: Zehao He, Ph.D. candidate
Hours: 9-11 hrs
Related website: https://crommie.berkeley.edu/
Mathematical and Physical Sciences Engineering, Design & Technologies